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Volumn 12, Issue 12, 2012, Pages 6119-6125

Spontaneous nucleation and growth of GaN nanowires: The fundamental role of crystal polarity

Author keywords

defect; nanocolumn; Nanorod; nucleation; polarity; semiconductor

Indexed keywords

ALN; ALN LAYERS; GAN LAYERS; GAN NANOWIRES; GAN-BASED DEVICES; GROWTH OF GAN; MORPHOLOGICAL DEFECTS; N-POLAR; NANOCOLUMN; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY; POLARITY; POLARITY INVERSION; SPONTANEOUS FORMATION; SPONTANEOUS NUCLEATION;

EID: 84870956284     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl302664q     Document Type: Article
Times cited : (110)

References (59)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.