Direct growth of high quality GaN by plasma assisted molecular beam epitaxy on 4H-SiC substrates

Materials Science Forum

Volumn 457-460, Issue II, 2004, Pages 1577-1580

  Fossard, F ^a   Brault, J ^a   Gogneau, N ^a   Monroy, E ^a   Enjalbert, F ^a   Dang, Le Si ^a   Bellet Amalric, E ^a   Monnoye, S ^b   Mank, H ^b   Daudin, B ^a  

^a UNIV GRENOBLE ALPES   (France)

^b SAVOIE TECHNOLAC   (France)

Author keywords

Epitaxy; Nitrides; Photoluminescence; X ray diffraction

Indexed keywords

CRYSTAL LATTICES; GALLIUM NITRIDE; LIGHT EMISSION; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; X RAY DIFFRACTION ANALYSIS;

GROWTH RATE; HIGH POWER DEVICES; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY (PAMBE);

SILICON CARBIDE;

EID: 8644265981     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.457-460.1577     Document Type: Conference Paper

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