SCOPUS 정보 검색 플랫폼

Applied Physics Letters

Volumn 98, Issue 7, 2011, Pages

Nucleation and coalescence effects on the density of self-induced GaN nanowires grown by molecular beam epitaxy

(5) Consonni, V a,b Knelangen, M a Trampert, A a Geelhaar, L a Riechert, H a

a PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK (Germany)

b Joseph Fourier University (France)

Author keywords

[No Author keywords available]

Indexed keywords

GAN NANOWIRES; GROWTH TIME; ISLAND NUCLEATION; NUCLEATION MECHANISM; SCANNING AND TRANSMISSION ELECTRON MICROSCOPY; SHAPE TRANSITIONS; SINGLE NANOWIRES;

COALESCENCE; GALLIUM ALLOYS; GALLIUM NITRIDE; GROWTH TEMPERATURE; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; NUCLEATION; TRANSMISSION ELECTRON MICROSCOPY;

NANOWIRES;

EID: 79951913334 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3555450 Document Type: Article

Times cited : (48)

References (13)

1
- 0031122751
- 0021-4922, 10.1143/JJAP.36.L459
- M. Yoshizawa, A. Kikuchi, M. Mori, N. Fujita, and K. Kishino, Jpn. J. Appl. Phys., Part 2 0021-4922 36, L459 (1997). 10.1143/JJAP.36.L459
- (1997) Jpn. J. Appl. Phys. , vol.36 , Issue.PART 2 , pp. 459
- Yoshizawa, M.¹ Kikuchi, A.² Mori, M.³ Fujita, N.⁴ Kishino, K.⁵

2
- 0031700776
- 0022-0248, 10.1016/S0022-0248(97)00386-2
- M. A. Sanchez-Garcia, E. Calleja, E. Monroy, F. J. Sanchez, F. Calle, E. Muoz, and R. Beresford, J. Cryst. Growth 0022-0248 183, 23 (1998). 10.1016/S0022-0248(97)00386-2
- (1998) J. Cryst. Growth , vol.183 , pp. 23
- Sanchez-Garcia, M.A.¹ Calleja, E.² Monroy, E.³ Sanchez, F.J.⁴ Calle, F.⁵ Muoz, E.⁶ Beresford, R.⁷

3
- 34548458124
- Axial and radial growth of Ni-induced GaN nanowires
- DOI 10.1063/1.2776979
- L. Geelhaar, C. Ch̀ze, W. M. Weber, R. Averbeck, H. Riechert, Th. Kehagias, Ph. Komninou, G. P. Dimitrakopulos, and Th. Karakostas, Appl. Phys. Lett. 0003-6951 91, 093113 (2007). 10.1063/1.2776979 (Pubitemid 47352343)
- (2007) Applied Physics Letters , vol.91 , Issue.9 , pp. 093113
- Geelhaar, L.¹ Chze, C.² Weber, W.M.³ Averbeck, R.⁴ Riechert, H.⁵ Kehagias, Th.⁶ Komninou, Ph.⁷ Dimitrakopulos, G.P.⁸ Karakostas, Th.⁹

4
- 77954436687
- 1998-0124, 10.1007/s12274-010-0013-9
- C. Ch̀ze, L. Geelhaar, O. Brandt, W. Weber, H. Riechert, S. Münch, R. Rothemund, S. Reitzenstein, A. Forchel, T. Kehagias, P. Komninou, G. P. Dimitrakopulos, and T. Karakostas, Nano Res. 1998-0124 3, 528 (2010). 10.1007/s12274-010-0013-9
- (2010) Nano Res. , vol.3 , pp. 528
- Ch̀ze, C.¹ Geelhaar, L.² Brandt, O.³ Weber, W.⁴ Riechert, H.⁵ Münch, S.⁶ Rothemund, R.⁷ Reitzenstein, S.⁸ Forchel, A.⁹ Kehagias, T.¹⁰ Komninou, P.¹¹ Dimitrakopulos, G.P.¹² Karakostas, T.¹³

5
- 34548149277
- Nucleation and growth of GaN nanowires on Si(111) performed by molecular beam epitaxy
- DOI 10.1021/nl0707398
- R. Calarco, R. Meijers, R. K. Debnath, T. Stoica, E. Sutter, and H. Lüth, Nano Lett. 1530-6984 7, 2248 (2007). 10.1021/nl0707398 (Pubitemid 47310114)
- (2007) Nano Letters , vol.7 , Issue.8 , pp. 2248-2251
- Calarco, R.¹ Meijers, R.J.² Debnath, R.K.³ Stoical, T.⁴ Sutter, E.⁵ Luth, H.⁶

6
- 77955727851
- 0003-6951, 10.1063/1.3275793
- V. Consonni, M. Knelangen, U. Jahn, A. Trampert, L. Geelhaar, and H. Riechert, Appl. Phys. Lett. 0003-6951 95, 241910 (2009). 10.1063/1.3275793
- (2009) Appl. Phys. Lett. , vol.95 , pp. 241910
- Consonni, V.¹ Knelangen, M.² Jahn, U.³ Trampert, A.⁴ Geelhaar, L.⁵ Riechert, H.⁶

7
- 37549053623
- 0003-6951, 10.1063/1.2817941
- R. Songmuang, O. Landŕ, and B. Daudin, Appl. Phys. Lett. 0003-6951 91, 251902 (2007). 10.1063/1.2817941
- (2007) Appl. Phys. Lett. , vol.91 , pp. 251902
- Songmuang, R.¹ Landŕ, O.² Daudin, B.³

8
- 73849110085
- 0021-8979, 10.1063/1.3267151
- S. Fernández-Garrido, J. Grandal, E. Calleja, M. A. Sánchez-García, and D. López-Romero, J. Appl. Phys. 0021-8979 106, 126102 (2009). 10.1063/1.3267151
- (2009) J. Appl. Phys. , vol.106 , pp. 126102
- Fernández-Garrido, S.¹ Grandal, J.² Calleja, E.³ Sánchez- García, M.A.⁴ López-Romero, D.⁵

9
- 77950511941
- 1742-6588, 10.1088/1742-6596/209/1/012001
- D. Cherns, L. Meshi, I. Griffiths, S. Khongphetsak, S. V. Novikov, R. P. Campion, C. T. Foxon, C. Liu, P. Shields, and W. N. Wang, J. Phys.: Conf. Ser. 1742-6588 209, 012001 (2010). 10.1088/1742-6596/209/1/012001
- (2010) J. Phys.: Conf. Ser. , vol.209 , pp. 012001
- Cherns, D.¹ Meshi, L.² Griffiths, I.³ Khongphetsak, S.⁴ Novikov, S.V.⁵ Campion, R.P.⁶ Foxon, C.T.⁷ Liu, C.⁸ Shields, P.⁹ Wang, W.N.¹⁰

10
- 34547220398
- 1063-7826, 10.1134/S1063782607070159
- V. G. Dubrovski, I. P. Soshnikov, N. V. Sibirev, G. É. Cirlin, V. M. Ustinov, M. Tchernycheva, and J. C. Harmand, Semiconductors 1063-7826 41, 865 (2007). 10.1134/S1063782607070159
- (2007) Semiconductors , vol.41 , pp. 865
- Dubrovski, V.G.¹ Soshnikov, I.P.² Sibirev, N.V.³ Cirlin, G.É.⁴ Ustinov, V.M.⁵ Tchernycheva, M.⁶ Harmand, J.C.⁷

11
- 77954871100
- 0556-2805, 10.1103/PhysRevB.81.085310
- V. Consonni, M. Knelangen, L. Geelhaar, A. Trampert, and H. Riechert, Phys. Rev. B 0556-2805 81, 085310 (2010). 10.1103/PhysRevB.81.085310
- (2010) Phys. Rev. B , vol.81 , pp. 085310
- Consonni, V.¹ Knelangen, M.² Geelhaar, L.³ Trampert, A.⁴ Riechert, H.⁵

12
- 77952615029
- 0957-4484, 10.1088/0957-4484/21/24/245705
- M. Knelangen, V. Consonni, A. Trampert, and H. Riechert, Nanotechnology 0957-4484 21, 245705 (2010). 10.1088/0957-4484/21/24/245705
- (2010) Nanotechnology , vol.21 , pp. 245705
- Knelangen, M.¹ Consonni, V.² Trampert, A.³ Riechert, H.⁴

13
- 79551619083
- 0556-2805, 10.1103/PhysRevB.83.035310
- V. Consonni, M. Knelangen, L. Geelhaar, A. Trampert, and H. Riechert, Phys. Rev. B 0556-2805 83, 035310 (2011). 10.1103/PhysRevB.83.035310
- (2011) Phys. Rev. B , vol.83 , pp. 035310
- Consonni, V.¹ Knelangen, M.² Geelhaar, L.³ Trampert, A.⁴ Riechert, H.⁵

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.