Polarity inversion of GaN(0 0 0 1) surfaces induced by Si adsorption

Surface Science

Volumn 600, Issue 2, 2006, Pages 335-339

  Rosa, A L ^a   Neugebauer, J ^b  

^a UPPSALA UNIVERSITY   (Sweden)

^b MAX PLANCK INSTITUT FÜR EISENFORSCHUNG GMBH   (Germany)

Author keywords

Density functional theory; GaN; Polarity inversion; Si

Indexed keywords

ADSORPTION; ELECTRONIC PROPERTIES; PROBABILITY DENSITY FUNCTION; SILICON; SURFACE PROPERTIES;

CHARGE COMPENSATION; GAN; POLARITY INVERSION;

GALLIUM NITRIDE;

EID: 31144455299     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2005.10.030     Document Type: Article

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