Effect of AlN buffer layer properties on the morphology and polarity of GaN nanowires grown by molecular beam epitaxy

Journal of Applied Physics

Volumn 110, Issue 5, 2011, Pages

  Brubaker, Matt D ^a,b,c   Levin, Igor ^a   Davydov, Albert V ^a   Rourke, Devin M ^a   Sanford, Norman A ^a   Bright, Victor M ^b,c   Bertness, Kris A ^a  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^b UCB 450   (United States)

^c UNIVERSITY OF COLORADO   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALN; ALN BUFFER; ALN FILMS; CONVERGENT-BEAM ELECTRON DIFFRACTION; FLUX RATIO; GAN NANOWIRES; GROWTH CONDITIONS; GROWTH MORPHOLOGY; GROWTH SURFACES; HIGH GROWTH RATE; LOW DENSITY; LOW TEMPERATURES; NUCLEATION SITES; PIEZORESPONSE FORCE MICROSCOPY; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY; SI (1 1 1); STRUCTURAL CHARACTERISTICS;

ALUMINUM; BUFFER LAYERS; COALESCENCE; EPITAXIAL GROWTH; GALLIUM NITRIDE; MOLECULAR BEAM EPITAXY; MORPHOLOGY; OPTICAL WAVEGUIDES; SEMICONDUCTING SILICON COMPOUNDS;

NANOWIRES;

EID: 80052936037     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3633522     Document Type: Conference Paper

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