Structural, electrical and optical properties of Si doped ZnO films grown by atomic layer deposition

Journal of Materials Science: Materials in Electronics

Volumn 23, Issue 11, 2012, Pages 2075-2081

  Yuan, Hai ^a  

^a NORTHWESTERN POLYTECHNICAL UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

BLUE SHIFT; C-AXIS ORIENTATIONS; DOPED ZNO; ELECTRICAL AND OPTICAL PROPERTIES; SI CONCENTRATION; SI-DOPING; VALENCE STATE; XPS MEASUREMENTS; ZNO; ZNO FILMS;

ATOMIC LAYER DEPOSITION; CARRIER CONCENTRATION; ELECTRIC PROPERTIES; METALLIC FILMS; OPTICAL PROPERTIES; SEMICONDUCTOR DOPING; ZINC OXIDE;

SILICON;

EID: 84869498672     PISSN: 09574522     EISSN: 1573482X     Source Type: Journal    
DOI: 10.1007/s10854-012-0713-x     Document Type: Article

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