Effect of Si doping on electrical and optical properties of ZnO thin films grown by sequential pulsed laser deposition

Journal of Physics D: Applied Physics

Volumn 42, Issue 16, 2009, Pages

  Das, A K ^a   Misra, P ^a   Kukreja, L M ^a  

^a RAJA RAMANNA CENTRE FOR ADVANCED TECHNOLOGY   (India)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAP NARROWING; BAND GAPS; BLUE SHIFT; BURSTEIN; COLLECTIVE EFFECTS; DISPLAY PANELS; DOPED ZNO; DOPING CONCENTRATION; ELECTRICAL AND OPTICAL PROPERTIES; LATTICE SITES; NON-VOLATILE MEMORIES; ORIENTED THIN FILMS; PL MEASUREMENTS; PULSED-LASER DEPOSITION TECHNIQUE; ROOM TEMPERATURE; SAPPHIRE SUBSTRATES; SI CONCENTRATION; SI-DOPING; TRANSMISSION SPECTRUMS; TRANSPARENT CONDUCTING ELECTRODES; ZNO; ZNO FILMS; ZNO THIN FILM;

CARRIER CONCENTRATION; CORUNDUM; DEPOSITION; ELECTRIC PROPERTIES; ENERGY GAP; METALLIC FILMS; OPTICAL FILMS; OPTICAL PROPERTIES; PHOTOVOLTAIC CELLS; PULSED LASER DEPOSITION; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR DOPING; SILICON; THIN FILMS; ZINC; ZINC OXIDE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 70349154683     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/42/16/165405     Document Type: Article

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