Evolution of Si suboxides into Si nanocrystals during rapid thermal annealing as revealed by XPS and Raman studies

Journal of Crystal Growth

Volumn 311, Issue 5, 2009, Pages 1296-1301

  Zhang, Wali ^a   Zhang, Sam ^a   Liu, Yang ^b   Chen, Tupei ^b  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

A1. Evolution; A1. Si nanocrystals; A1. Thermal decomposition; B1. Si suboxides

Indexed keywords

ELECTRODEPOSITION; MODEL STRUCTURES; NANOCRYSTALS; PHOTORESISTS; PYROLYSIS; RAMAN SCATTERING; RAMAN SPECTROSCOPY; RAPID THERMAL ANNEALING; RAPID THERMAL PROCESSING; SILICON; SILICON COMPOUNDS; SPECTRUM ANALYSIS; STRUCTURE (COMPOSITION); THERMOGRAVIMETRIC ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

A1. EVOLUTION; A1. SI NANOCRYSTALS; A1. THERMAL DECOMPOSITION; AMORPHOUS SI; AS-DEPOSITED FILMS; B1. SI SUBOXIDES; BONDING MODELS; BONDING STRUCTURES; CHEMICAL STRUCTURES; DIFFUSION PROCESS; RAMAN SPECTRUM; RAMAN STUDIES; RAPID GROWTHS; SILICON OXIDATIONS; THERMAL-ANNEALING; X-RAY PHOTOELECTRON SPECTROSCOPIES; XPS;

AMORPHOUS SILICON;

EID: 61449113804     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.12.038     Document Type: Article

References (25)

1. Takeoka S., Fujii M., and Hayashi S. Phys. Rev. B 62 (2000) 16820
2. Walters R.J., Bourianoff G.I., and Atwater H.A. Nat. Mater. 4 (2005) 143
3. Walters R.J., Carreras J., Feng T., Bell L.D., and Atwater H.A. IEEE J. Sel. Top. Quant. 12 (2006) 1647
4. Walters R.J., Kalkman J., Polman A., Atwater H.A., and de Dood M.J.A. Phys. Rev. B 73 (2006) 132302
5. Pace C., Crupi F., Corso D., and Lombardo S. J. Nanosci. Nanotechnol. 7 (2007) 322
6. Tiwari S., Rana F., Hanafi H., Hartstein A., Crabbe E.F., and Chan K. Appl. Phys. Lett. 68 (1996) 1377
7. Porti M., Avidano M., Nafria M., Aymerich X., Carreras J., and Garrido B. Microelectron. Eng. 80 (2005) 268
8. Dovrat M., Goshen Y., Jedrzejewski J., Balberg I., and Sa'ar A. Phys. Rev. B 69 (2004) 155311
9. Torchynska T.V., Aguilar-Hernandez J., Hernandez L.S., Goldstein Y., Many A., Jedrzejewski J., and Kolobov A. J. Lumin. 102 (2003) 557
10. Nesbit L.A. Appl. Phys. Lett. 46 (1985) 38
11. Hohl A., Wieder T., van Aken P.A., Weirich T.E., Denninger G., Vidal M., Oswald S., Deneke C., Mayer J., and Fuess H. J. Non-Cryst. Solids 320 (2003) 255
12. Bratus V.Y., Yukhimchuk V.A., Berezhinsky L.I., Valakh M.Y., Vorona I.P., Indutnyi I.Z., Petrenko T.T., Shepeliavyi P.E., and Yanchuk I.B. Semiconductors 35 (2001) 821
13. Liu Y., Chen T.P., Fu Y.Q., Tse M.S., Hsieh J.H., Ho P.F., and Liu Y.C. J. Phys. D-Appl. Phys. 36 (2003) L97
14. Philipp H.R. J. Non-Cryst. Solids 8-10 (1972) 627
15. Rochet F., Dufour G., Roulet H., Pelloie B., Perriere J., Fogarassy E., Slaoui A., and Froment M. Phys. Rev. B 37 (1988) 6468
16. Nesheva D., Raptis C., Perakis A., Bineva I., Aneva Z., Levi Z., Alexandrova S., and Hofmeister H. J. Appl. Phys. 92 (2002) 4678
17. Ossadnik C., Veprek S., and Gregora I. Thin Solid Films 337 (1999) 148
18. Wellner A., Paillard V., Coffin H., Cherkashin N., and Bonafos C. J. Appl. Phys. 96 (2004) 2403
19. Ledinsky M., Fekete L., Stuchlik J., Mates T., Fejfar A., and Kocka J. J. Non-Cryst. Solids 352 (2006) 1209
20. Huet S., Viera G., and Boufendi L. Thin Solid Films 403-404 (2002) 193
21. Fazio B., Vulpio M., Gerardi C., Liao Y., Crupi I., Lombardo S., Trusso S., and Neri F. J. Electrochem. Soc. 149 (2002) G376
22. Kanzawa Y., Hayashi S., and Yamamoto K. J. Phys. Condens. Matter 8 (1996) 4823
23. Barranco A., Yubero F., Espinos J.P., Holgado J.P., Caballero A., Gonzalez-Elipe A.R., and Mejias J.A. Vacuum 67 (2002) 491
24. Kanemitsu Y., Ogawa T., Shiraishi K., and Takeda K. Phys. Rev. B 48 (1993) 4883
25. Thogersen A., Diplas S., Mayandi J., Finstad T., Olsen A., Watts J.F., Mitome M., and Bando Y.J. Appl. Phys. 103 (2008) 024308