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Volumn 281, Issue 2-4, 2005, Pages 475-480
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Post-annealing of Al-doped ZnO films in hydrogen atmosphere
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Author keywords
A1. Hydrogen passivation; B1. Al doped ZnO (ZnO:Al); B1. Transparent conductive oxide (TCO)
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Indexed keywords
ALUMINUM;
ANNEALING;
CRYSTALLINE MATERIALS;
ELECTRIC PROPERTIES;
GLASS;
HYDROGEN;
OXIDES;
PASSIVATION;
SEMICONDUCTOR DOPING;
SUBSTRATES;
THIN FILMS;
AL-DOPED ZNO (ZNO:AL);
BURSTEIN-MOSS EFFECTS;
HYDROGEN PASSIVATION;
TRANSPORT CONDUCTIVE OXIDE (TCO);
ZINC OXIDE;
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EID: 22144438031
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jcrysgro.2005.04.045 Document Type: Article |
Times cited : (192)
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References (31)
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