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Applied Surface Science

Volumn 258, Issue 6, 2012, Pages 2177-2181

The electrical, optical and magnetic properties of Si-doped ZnO films

(5) Luo, J T a Zhu, X Y a Chen, G a Zeng, F a Pan, F a

a TSINGHUA UNIVERSITY (China)

Author keywords

Electrical property; Ferromagnetism; Photoluminescence; Si doping; ZnO films

Indexed keywords

CARRIER CONCENTRATION; CRYSTAL IMPURITIES; DEFECTS; ELECTRIC PROPERTIES; ENERGY GAP; FERROMAGNETISM; II-VI SEMICONDUCTORS; MAGNETIC MOMENTS; MAGNETIC PROPERTIES; METALLIC FILMS; PHOTOLUMINESCENCE; SILICON; ZINC OXIDE;

BAND GAP NARROWING; BURSTEIN-MOSS EFFECTS; COLLECTIVE EFFECTS; FERROMAGNETIC ORDERINGS; NEAR BAND EDGE EMISSIONS; SI-DOPING; STRUCTURAL DEFECT; ZNO FILMS;

SEMICONDUCTOR DOPING;

EID: 84855285125 PISSN: 01694332 EISSN: None Source Type: Journal
DOI: 10.1016/j.apsusc.2011.02.093 Document Type: Article

Times cited : (58)

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