SCOPUS 정보 검색 플랫폼

Journal of Materials Science: Materials in Electronics

Volumn 23, Issue 2, 2012, Pages 376-383

Effect of annealing temperature on the microstructural and electrical properties of epitaxial Ga-doped ZnO film deposited on c-sapphire substrate

(5) Zhang, Zhiyun a Bao, Chonggao a Li, Qun a Ma, Shengqiang a Hou, Shuzeng a

a XI'AN JIAOTONG UNIVERSITY (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TEMPERATURES; C-SAPPHIRE; CRYSTALLINITIES; EXTENDED DISLOCATIONS; GA-DOPED ZNO; MICRO-STRUCTURAL; NANO SCALE; OPTIMAL ANNEALING; PULSE LASER DEPOSITION;

ANNEALING; DEFECTS; GALLIUM; GALLIUM ALLOYS; SAPPHIRE; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; VAPOR DEPOSITION; X RAY DIFFRACTION; ZINC OXIDE;

ELECTRIC PROPERTIES;

EID: 84856711314 PISSN: 09574522 EISSN: 1573482X Source Type: Journal
DOI: 10.1007/s10854-011-0420-z Document Type: Article

Times cited : (9)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.