Low temperature Si doped ZnO thin films for transparent conducting oxides

Solar Energy Materials and Solar Cells

Volumn 95, Issue 8, 2011, Pages 2357-2362

  Clatot, J ^a   Campet, G ^b   Zeinert, A ^c   Labrugere C ^b   Nistor, M ^d   Rougier, A ^a  

^a CNRS RS2E FR 3459   (France)

^b UNIVERSITÉ DE BORDEAUX   (France)

^c Universite de Picardie Jules Verne   (France)

^d NATIONAL INSTITUTE FOR LASER   (Romania)

Author keywords

Optical properties; Pulsed laser deposition; Simulation; Transparent conducting oxide; Zinc oxide

Indexed keywords

CONDUCTIVE FILMS; ELECTRONIC PROPERTIES; II-VI SEMICONDUCTORS; OPTICAL PROPERTIES; OXYGEN; PULSED LASER DEPOSITION; PULSED LASERS; SILICON COMPOUNDS; SUBSTRATES; TEMPERATURE; TRANSPARENT CONDUCTING OXIDES; ZINC OXIDE;

DOPED ZNO THIN FILMS; ELECTRICAL AND OPTICAL PROPERTIES; FILM CRYSTALLINITY; HALL EFFECT MEASUREMENT; LOW SUBSTRATE TEMPERATURE; OPTICAL RESISTIVITY; SIMULATION; TRANSMITTANCE SPECTRA;

THIN FILMS;

EID: 79958162593     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2011.04.006     Document Type: Article

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