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Journal of Materials Science: Materials in Electronics

Volumn 23, Issue 2, 2012, Pages 413-417

Preparation of highly transparent conductive Al-doped ZnO thin films and annealing effects on properties

(4) Deng, Xue Ran a Deng, Hong a Wei, Min a Chen, Jin Ju a

a UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA (China)

Author keywords

[No Author keywords available]

Indexed keywords

AL-DOPED ZNO; ALUMINUM-DOPED ZNO; ANNEALED FILMS; ANNEALING ATMOSPHERES; ANNEALING EFFECTS; ANNEALING TEMPERATURES; ANNEALING TREATMENTS; ANTI-SITE DEFECT; ARGON AMBIENT; AS-GROWN FILMS; COMPOSITION CONTENT; CRYSTALLINE QUALITY; ELECTRICAL AND OPTICAL PROPERTIES; FUSED QUARTZ; GRAIN SIZE; IN-SITU ANNEALING; MICROSTRUCTURE PROPERTIES; OXYGEN ATMOSPHERE; PL SPECTRA; RADIO FREQUENCY SPUTTERING; TRANSPARENT CONDUCTIVE; VISIBLE REGION; XRD;

ALUMINUM; ALUMINUM COATINGS; ANNEALING; MICROSTRUCTURE; OPTICAL PROPERTIES; POINT DEFECTS; QUARTZ; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY; ZINC; ZINC OXIDE;

ELECTRIC PROPERTIES;

EID: 84856711897 PISSN: 09574522 EISSN: 1573482X Source Type: Journal
DOI: 10.1007/s10854-011-0482-y Document Type: Article

Times cited : (29)

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