Enhanced ultraviolet emission in photoluminescence of GaN film covered by ZnO nanoflakes

Journal of Luminescence

Volumn 134, Issue , 2013, Pages 266-271

  Saron, K M A ^a   Hashim, M R ^a   Suleiman, Kamal Mahir ^b   Al Heuseen, K ^a  

^a SCHOOL OF PHYSICS   (Malaysia)

^b Alzaiem Alazhary University   (Sudan)

Author keywords

GaN; Photoluminescence; Thermal oxidation; ZnO

Indexed keywords

AS-GROWN; CAP LAYERS; GAN; GAN FILM; GAN LAYERS; HIGH DENSITY; NANOFLAKES; OXIDATION TEMPERATURE; PEAK POSITION; PHOTOLUMINESCENCE EMISSION; PL EMISSION; PL SPECTRA; RED SHIFT; THERMAL OXIDATION; ULTRA-VIOLET; ULTRAVIOLET EMISSION; UV EMISSIONS; UV PHOTODETECTORS; UV REGION; ZNO;

OPTICAL PROPERTIES; OXIDATION; PHOTODETECTORS; PHOTOLUMINESCENCE; PHOTONS; RAMAN SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR QUANTUM WELLS; X RAY DIFFRACTION; ZINC OXIDE;

GALLIUM NITRIDE;

EID: 84869492212     PISSN: 00222313     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jlumin.2012.08.034     Document Type: Article

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