The 310-340 nm ultraviolet light emitting diodes grown using a thin GaN interlayer on a high temperature AlN buffer

Journal of Physics D: Applied Physics

Volumn 41, Issue 9, 2008, Pages

  Wang, T ^a   Lee, K B ^a   Bai, J ^a   Parbrook, P J ^a   Ranalli, F ^a   Wang, Q ^a   Airey, R J ^a   Cullis, A G ^a   Zhang, H X ^b   Massoubre, D ^b   Gong, Z ^b   Watson, I M ^b   Gu, E ^b   Dawson, M D ^b  

^a UNIVERSITY OF SHEFFIELD   (United Kingdom)

^b UNIVERSITY OF STRATHCLYDE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC PROPERTIES; GALLIUM NITRIDE; OPTICAL PROPERTIES; TRANSMISSION ELECTRON MICROSCOPY; ULTRAVIOLET RADIATION; WAVELENGTH;

HIGH DEVICE PERFORMANCE; HIGH TEMPERATURE ALN BUFFER; ULTRAVIOLET LIGHT EMITTING DIODES (UV-LED); UV LIGHT SOURCES;

LIGHT EMITTING DIODES;

EID: 42549151889     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/41/9/094003     Document Type: Article

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