MOCVD growth of GaN on Si(1 1 1) substrates using an ALD-grown Al2O3 interlayer

Journal of Crystal Growth

Volumn 311, Issue 18, 2009, Pages 4306-4310

  Fenwick, William E ^a   Li, Nola ^a   Xu, Tianming ^a,b   Melton, Andrew ^a   Wang, Shenjie ^a   Yu, Hongbo ^a   Summers, Christopher ^c   Jamil, Muhammad ^a   Ferguson, Ian T ^a,c  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^b HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

^c Georgia Institute of Technology   (United States)

Author keywords

A3. Metalorganic chemical vapor deposition; B1. Nitrides; B1. Oxides; B2. Semiconducting III V materials; B2. Semiconducting silicon

Indexed keywords

A3. METALORGANIC CHEMICAL VAPOR DEPOSITION; B1. NITRIDES; B1. OXIDES; B2. SEMICONDUCTING III-V MATERIALS; B2. SEMICONDUCTING SILICON;

ALUMINUM; ATOMIC LAYER DEPOSITION; COMPOSITE FILMS; CORUNDUM; DEPOSITION; EMISSION SPECTROSCOPY; FULL WIDTH AT HALF MAXIMUM; GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; RAMAN SPECTROSCOPY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SUBSTRATES; THIN FILMS; VAPORS;

GALLIUM ALLOYS;

EID: 69149099097     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2009.07.022     Document Type: Article

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