GaN-based light-emitting diode with textured indium tin oxide transparent layer coated with Al2 O3 powder

Applied Physics Letters

Volumn 94, Issue 16, 2009, Pages

  Kim, T K ^a   Kim, S H ^a   Yang, S S ^a,b   Son, J K ^a,b   Lee, K H ^a,b   Hong, Y G ^a,b   Shim, K H ^a   Yang, J W ^a   Lim, K Y ^a   Bae, S J ^a   Yang, G M ^a,b  

^a Chonbuk National University   (South Korea)

^b Optowell Co Ltd   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ETCHING MASKS; EXTRACTION EFFICIENCIES; GAN-BASED LIGHT-EMITTING DIODES; INDIUM TIN OXIDES; INGAN/GAN; LIGHT EMITTING DIODE LEDS; LIGHT OUTPUT POWER; NATURAL LITHOGRAPHIES; SPIN-COATING PROCESS; SURFACE-TEXTURING; TEXTURED SURFACES; TOTAL INTERNAL REFLECTIONS; TRANSPARENT LAYERS;

CURRENT DENSITY; EXTRACTION; GALLIUM ALLOYS; GALLIUM NITRIDE; INDIUM; INDUCTIVELY COUPLED PLASMA; LIGHT EMISSION; LIGHT REFLECTION; ORGANIC LIGHT EMITTING DIODES (OLED); OZONE WATER TREATMENT; PHOTOLITHOGRAPHY; PLASMA DIODES; PLASMA ETCHING; POWDER COATINGS; POWDERS; REFRACTIVE INDEX; SEMICONDUCTING GALLIUM; TEXTURING; TIN; TITANIUM COMPOUNDS;

LIGHT EMITTING DIODES;

EID: 65449139881     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3120222     Document Type: Article

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