Amplified spontaneous emission from ZnO in n-ZnO/p-GaN heterojunction light-emitting diodes with an external-feedback reflector

IEEE Photonics Technology Letters

Volumn 22, Issue 4, 2010, Pages 248-250

  Chen, Hsing Chao ^a   Chen, Miin Jang ^a   Cheng, Yung Chen ^b   Yang, Jer Ren ^a   Shiojiri, Makoto ^c  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^b NATIONAL UNIVERSITY OF TAINAN   (Taiwan)

^c KYOTO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Atomic layer deposition (ALD); Heterojunction; Light emitting diode (LED); Zinc oxide

Indexed keywords

AMPLIFIED SPONTANEOUS EMISSIONS; ATOMIC LAYER DEPOSITION (ALD); EXTERNAL OPTICAL FEEDBACK; HIGH QUALITY; INJECTION CURRENTS; LIGHT-EMITTING DIODE (LED); METALORGANIC CHEMICAL VAPOR DEPOSITION; P-TYPE GAN; ROOM TEMPERATURE; SPECTRAL NARROWING; SUPERLINEAR; ULTRAVIOLET ELECTROLUMINESCENCE; ZNO;

ALUMINUM COATINGS; ATOMIC LAYER DEPOSITION; ATOMS; DIODES; ELECTROLUMINESCENCE; EPILAYERS; FEEDBACK; GALLIUM ALLOYS; GALLIUM NITRIDE; HETEROJUNCTIONS; LIGHT; LIGHT EMISSION; LIGHT EMITTING DIODES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; ORGANIC CHEMICALS; REFLECTION; SPONTANEOUS EMISSION; VAPOR DEPOSITION; ZINC; ZINC OXIDE;

ORGANIC LIGHT EMITTING DIODES (OLED);

EID: 77955179962     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2009.2038073     Document Type: Article

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