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Volumn 22, Issue 8, 2007, Pages 905-910

Study of electrical characteristics of Ge islands MSM photodetector structure grown on Si substrate using conventional methods

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC PROPERTIES; ENERGY DISPERSIVE X RAY ANALYSIS; GERMANIUM COMPOUNDS; RAMAN SPECTROSCOPY; RAPID THERMAL ANNEALING; THERMAL EVAPORATION;

EID: 34547478697     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/22/8/014     Document Type: Article
Times cited : (18)

References (15)
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    • Intelligent integration of optical power splitter with optically switchable cross-connect based on multimode interference principle in SiGe/Si
    • Li B, Chua S, Fitzgerald E A, Chaudhari B S, Jiang S and Cai Z 2004 Intelligent integration of optical power splitter with optically switchable cross-connect based on multimode interference principle in SiGe/Si Appl. Phys. Lett. 85 1119
    • (2004) Appl. Phys. Lett. , vol.85 , pp. 1119
    • Li, B.1    Chua, S.2    Fitzgerald, E.A.3    Chaudhari, B.S.4    Jiang, S.5    Cai, Z.6
  • 5
    • 10044294834 scopus 로고    scopus 로고
    • Real-time analysis of wetting-layer evolution and island nucleation using spectroscopic ellipsometry with Tauc-Lorentz parametrization
    • Osipov A V, Schmitt F and Hess P 2005 Real-time analysis of wetting-layer evolution and island nucleation using spectroscopic ellipsometry with Tauc-Lorentz parametrization Thin Solid Films 472 31
    • (2005) Thin Solid Films , vol.472 , Issue.1-2 , pp. 31
    • Osipov, A.V.1    Schmitt, F.2    Hess, P.3
  • 7
    • 0033311632 scopus 로고    scopus 로고
    • x islands using reduced pressure chemical vapor deposition and subsequent thermal annealing of thin germanium-rich films
    • x islands using reduced pressure chemical vapor deposition and subsequent thermal annealing of thin germanium-rich films Appl. Surf. Sci. 152 99
    • (1999) Appl. Surf. Sci. , vol.152 , Issue.1-2 , pp. 99
    • Bashir, R.1    Kabir, A.E.2    Chao, K.3
  • 10
    • 84949116337 scopus 로고    scopus 로고
    • Two dimensional device modeling and analysis of GaInAs metal-semiconductor-metal photodiode structures
    • Averin S, Sachot R, Hugy J, de Fays M and Illegems M 1996 Two dimensional device modeling and analysis of GaInAs metal-semiconductor-metal photodiode structures J. Appl. Phys. 80 1553
    • (1996) J. Appl. Phys. , vol.80 , Issue.3 , pp. 1553
    • Averin, S.1    Sachot, R.2    Hugy, J.3    De Fays, M.4    Illegems, M.5
  • 11
    • 0026116405 scopus 로고
    • InGaAs metal-semiconductor-metal photodetectors for long wavelength optical communications
    • Soole J B D and Schumacher H 1991 InGaAs metal-semiconductor-metal photodetectors for long wavelength optical communications IEEE J. Quantum Electron. 27 737
    • (1991) IEEE J. Quantum Electron. , vol.27 , Issue.3 , pp. 737
    • Soole, J.B.D.1    Schumacher, H.2
  • 12
    • 15344340185 scopus 로고    scopus 로고
    • Effects of the temperature and of the amount of Ge on the morphology of Ge islands grown by reduced pressure-chemical vapor deposition
    • Hartmann J M, Bertin F, Rolland G, Séméria M N and Brémond G 2005 Effects of the temperature and of the amount of Ge on the morphology of Ge islands grown by reduced pressure-chemical vapor deposition Thin Solid Films 479 113
    • (2005) Thin Solid Films , vol.479 , Issue.1-2 , pp. 113
    • Hartmann, J.M.1    Bertin, F.2    Rolland, G.3    Séméria, M.N.4    Brémond, G.5
  • 15
    • 18644374770 scopus 로고    scopus 로고
    • Enhanced semiconductor absorption via surface plasmon excitation in metal nanoparticles
    • Schaadt D M, Feng B and Yu E T 2005 Enhanced semiconductor absorption via surface plasmon excitation in metal nanoparticles Appl. Phys. Lett. 86 063106
    • (2005) Appl. Phys. Lett. , vol.86 , pp. 063106
    • Schaadt, D.M.1    Feng, B.2    Yu, E.T.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.