Nanoscale ITO/ZnO layer-texturing for high-efficiency InGaN/GaN light emitting diodes

Materials Science and Engineering: B

Volumn 166, Issue 3, 2010, Pages 230-234

  Uthirakumar, Periyayya ^a   Kang, Ji Hye ^a   Ryu, Beo Deul ^a   Kim, Hyung Gu ^a   Kim, Hyun Kyu ^a   Hong, Chang Hee ^a  

^a Chonbuk National University   (South Korea)

Author keywords

LED; Light extraction; Spin coating; Wet etching; Zinc oxide

Indexed keywords

EFFICIENCY; EXTRACTION; II-VI SEMICONDUCTORS; III-V SEMICONDUCTORS; LIGHT EMITTING DIODES; LIGHT SCATTERING; NANOTECHNOLOGY; WET ETCHING; ZINC COATINGS;

GAN LIGHT-EMITTING DIODES; GAN-BASED LIGHT-EMITTING DIODES; HIGHER EFFICIENCY; INGAN/GAN; LIGHT EXTRACTION; LIGHT-EXTRACTION EFFICIENCY; LIGHTEMITTING DIODE; NANO SCALE; SIMPLE++; ZNO LAYERS;

ZINC OXIDE;

EID: 74149086508     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2009.11.024     Document Type: Article

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