Excitonic properties of strained wurtzite and zinc-blende GaN/Al xGa 1-xN quantum dots

Journal of Applied Physics

Volumn 94, Issue 11, 2003, Pages 7178-7186

  Fonoberov, Vladimir A ^a   Balandin, Alexander A ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EXCITON STATES; EXCITONIC PROPERTIES; QUANTUM CONFINEMENT; RADIATIVE DECAY;

ALUMINUM NITRIDE; CRYSTAL GROWTH; CRYSTAL STRUCTURE; ELECTRIC FIELDS; ENERGY GAP; FINITE DIFFERENCE METHOD; FINITE ELEMENT METHOD; GALLIUM NITRIDE; GROUND STATE; LIGHT EMITTING DIODES; MATRIX ALGEBRA; MOLECULAR BEAM EPITAXY; OPTOELECTRONIC DEVICES; PERMITTIVITY; PIEZOELECTRICITY; POTENTIAL ENERGY;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0346962334     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1623330     Document Type: Article

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