Stress control in ZnO films on GaN/Al 2 O 3 via wet oxidation of Zn under various temperatures

Applied Surface Science

Volumn 258, Issue 13, 2012, Pages 5200-5205

  Saron, K M A ^a   Hashim, M R ^a   Farrukh, M A ^b  

^a SCHOOL OF PHYSICS   (Malaysia)

^b GC UNIVERSITY   (Pakistan)

Author keywords

Nanostructures; Stress; Wet oxidation; ZnO

Indexed keywords

ALUMINUM COMPOUNDS; CRYSTALLINE MATERIALS; ENERGY GAP; GALLIUM NITRIDE; II-VI SEMICONDUCTORS; III-V SEMICONDUCTORS; IMAGE ENHANCEMENT; LATTICE CONSTANTS; METALLIC FILMS; NANOSTRUCTURES; OXIDATION; OXIDE FILMS; SCANNING ELECTRON MICROSCOPY; STRESSES; THIN FILMS; X RAY DIFFRACTION; ZINC OXIDE;

CONSTANT FLOW RATES; DEFORMATION MODES; NANOSTRUCTURED THIN FILM; OPTICAL CHARACTERIZATION; OXIDATION TEMPERATURE; PHOTOLUMINESCENCE SPECTRUM; SCANNING ELECTRON MICROSCOPY IMAGE; WET OXIDATION;

COMPRESSIVE STRESS;

EID: 84858080896     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2012.01.114     Document Type: Article

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