Porous GaN on Si(1 1 1) and its application to hydrogen gas sensor

Sensors and Actuators, B: Chemical

Volumn 155, Issue 2, 2011, Pages 699-708

  Ramizy, Asmiet ^a   Hassan, Z ^a   Omar, Khalid ^a  

^a SCHOOL OF PHYSICS   (Malaysia)

Author keywords

Electrochemical etching; Gas sensor; Heterostructure; Porous GaN

Indexed keywords

ACOUSTIC PHONONS; AS-GROWN; BLUE SHIFT; DIFFERENT SIZES; ELECTROCHEMICAL ETCHING TECHNIQUES; ETCHED SURFACE; GAS SENSOR; GAS SENSORS; HETEROSTRUCTURE; HETEROSTRUCTURES; HYDROGEN FLOW RATE; HYDROGEN GAS SENSORS; OPTICAL PHONONS; POROUS GAN; RAMAN SPECTRA; RESEARCH GROUPS; SI (1 1 1); XRD SPECTRA;

CRYSTALLITE SIZE; ELECTROCHEMICAL ETCHING; GAS DETECTORS; HYDROGEN; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; PHONONS; PORE STRUCTURE; RAMAN SPECTROSCOPY; SENSORS; SILICON; SURFACE MORPHOLOGY;

GALLIUM NITRIDE;

EID: 79957852596     PISSN: 09254005     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.snb.2011.01.034     Document Type: Article

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