Effective passivation of In 0.2Ga 0.8As by HfO 2 surpassing Al 2O 3 via in-situ atomic layer deposition

Applied Physics Letters

Volumn 101, Issue 17, 2012, Pages

  Chang, Y H ^a   Lin, C A ^a   Liu, Y T ^a   Chiang, T H ^a   Lin, H Y ^a   Huang, M L ^a   Lin, T D ^b   Pi, T W ^c   Kwo, J ^a   Hong, M ^b  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^c NATIONAL SYNCHROTRON RADIATION RESEARCH CENTER   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

AS INTERFACES; C-V CHARACTERISTIC; CAPACITANCE VOLTAGE; HIGH-TEMPERATURE ANNEALING; IN-SITU; INTERFACIAL DENSITY; NATIVE OXIDES; OXIDIZED STATE; PASSIVATION LAYER; PRISTINE SURFACES; QUASI-STATIC; ROOM TEMPERATURE; TRIMETHYLALUMINUM; X RAY PHOTOELECTRON SPECTRA;

ADSORPTION; ALUMINUM; GALLIUM; GATE DIELECTRICS; HAFNIUM OXIDES; INTERFACE STATES; MOLECULAR BEAM EPITAXY; PASSIVATION; X RAY PHOTOELECTRON SPECTROSCOPY;

ATOMIC LAYER DEPOSITION;

EID: 84868024251     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4762833     Document Type: Article

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