Electrical properties and interfacial chemical environments of in situ atomic layer deposited Al2O3 on freshly molecular beam epitaxy grown GaAs

Microelectronic Engineering

Volumn 88, Issue 4, 2011, Pages 440-443

  Chang, Y H ^a   Huang, M L ^a   Chang, P ^a   Lin, C A ^a   Chu, Y J ^a   Chen, B R ^a   Hsu, C L ^a   Kwo, J ^a,b   Pi, T W ^c   Hong, M ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^c NATIONAL SYNCHROTRON RADIATION RESEARCH CENTER   (Taiwan)

Author keywords

Atomic layer deposition; III V compound semiconductor; Molecular beam epitaxy

Indexed keywords

ANNEALED SAMPLES; ARSENIC OXIDE; ATOMIC LAYER DEPOSITED; C-V CHARACTERISTIC; CAPACITANCE-VOLTAGE CHARACTERISTICS; CHEMICAL BONDINGS; ELECTRICAL CHARACTERIZATION; ELECTRICAL PROPERTY; FREQUENCY DISPERSION; GAAS; GAAS(001); III-V COMPOUND SEMICONDUCTOR; IN-SITU; INTERFACIAL ANALYSIS; INTERFACIAL CHEMICALS; METAL-OXIDE-SEMICONDUCTOR CAPACITORS;

ALUMINUM; ANNEALING; ARSENIC; ATOMIC LAYER DEPOSITION; ATOMS; CHEMICAL ANALYSIS; CHEMICAL BONDS; DISPERSIONS; ELECTRIC PROPERTIES; EPITAXIAL GROWTH; GALLIUM ALLOYS; GALLIUM ARSENIDE; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM; X RAY PHOTOELECTRON SPECTROSCOPY;

MOLECULAR BEAMS;

EID: 79751524419     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2010.09.015     Document Type: Conference Paper

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