Comparison of n -type and p -type GaAs oxide growth and its effects on frequency dispersion characteristics

Applied Physics Letters

Volumn 93, Issue 11, 2008, Pages

  Hinkle, C L ^a   Sonnet, A M ^a   Milojevic, M ^a   Aguirre Tostado, F S ^a   Kim, H C ^a   Kim, J ^a   Wallace, R M ^a   Vogel, E M ^a  

^a The University of Texas at Dallas   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC COMPOUNDS; CAPACITANCE; DISPERSION (WAVES); GALLIUM; GALLIUM COMPOUNDS; SEMICONDUCTING GALLIUM; SUBSTRATES;

CHEMICAL CONDITIONING; ELECTRICAL CHARACTERISTICS; FREQUENCY DISPERSIONS; GALLIUM ARSENIDE; OXIDE GROWTH; P-TYPE GAAS; PHOTO-ELECTROCHEMICAL PROPERTIES; TRAP TIME;

GALLIUM ALLOYS;

EID: 52349098518     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2987428     Document Type: Article

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