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Journal of Vacuum Science and Technology B

Volumn 29, Issue 3, 2011, Pages

Self-aligned inversion-channel In0.2Ga0.8As metal-oxide-semiconductor field-effect transistor with molecular beam epitaxy Al2 O3/Ga2O3(Gd2O 3) as the gate dielectric

(6) Chang, W H a Chiang, T H a Wu, Y D a Hong, M a Lin, C A a Kwo, J b

a NATIONAL TSING HUA UNIVERSITY (Taiwan)

b NATIONAL TAIWAN UNIVERSITY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITION; DIELECTRIC DEVICES; DRAIN CURRENT; ELECTRIC BREAKDOWN; GALLIUM ARSENIDE; GATE DIELECTRICS; III-V SEMICONDUCTORS; INDIUM ALLOYS; METALS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MOS DEVICES; OXIDE SEMICONDUCTORS; SEMICONDUCTING GALLIUM; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR ALLOYS; SUBSTRATES; TIN OXIDES; TITANIUM NITRIDE; TRANSISTORS;

ATOMIC LAYER DEPOSITED; DEVICE PERFORMANCE; EXTRINSIC TRANSCONDUCTANCE; GATE LENGTH; INVERSION CHANNELS; MAXIMUM DRAIN CURRENT; SELF-ALIGNED; TIN METAL GATE;

MOSFET DEVICES;

EID: 84905950002 PISSN: 21662746 EISSN: 21662754 Source Type: Journal
DOI: 10.1116/1.3565057 Document Type: Article

Times cited : (4)

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