Catalyst-assisted hydride vapor phase epitaxy of GaN nanowires: Exceptional length and constant rod-like shape capability

Nanotechnology

Volumn 23, Issue 40, 2012, Pages

  Lekhal, K ^a   Avit, G ^a   Andre Y ^a   Trassoudaine, A ^a   Gil, E ^a   Varenne, C ^a   Bougerol, C ^b   Monier, G ^a   Castelluci, D ^a  

^a UNIVERSITÉ BLAISE PASCAL   (France)

^b UNIV GRENOBLE ALPES   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CHLORIDE MOLECULES; GAN NANOWIRES; GROWTH MECHANISMS; HOT-WALL REACTORS; HYDRIDE VAPOR PHASE EPITAXY; METAL-ORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTOR NANOWIRE; SHORT-TIME PROCESS; SOLIDIFICATION RATE; V/III RATIO;

CATALYSTS; CHLORINE COMPOUNDS; GALLIUM NITRIDE; METALLORGANIC VAPOR PHASE EPITAXY; MOLECULAR BEAM EPITAXY; NANOWIRES; PHASE DIAGRAMS; SEMICONDUCTING GALLIUM COMPOUNDS; VAPORS;

EPITAXIAL GROWTH;

EID: 84866425537     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/23/40/405601     Document Type: Article

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