Exceptional crystal-defined bunched and hyperbunched GaN nanorods grown by catalyst-free HVPE

Crystal Growth and Design

Volumn 12, Issue 5, 2012, Pages 2251-2256

  Lekhal, K ^a,b   Andre Y ^a,b   Trassoudaine, A ^a,b   Gil, E ^a,b   Avit, G ^a,b   Cellier, J ^a   Castelluci, D ^a,b  

^a UNIVERSITÉ CLERMONT AUVERGNE   (France)

^b CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIA GAS; C-PLANE SAPPHIRE; CATALYST-FREE; CONDENSATION GROWTH; CRYSTALLOGRAPHIC FACETS; FIELD EMISSION SCANNING ELECTRON MICROSCOPY; GAN NANORODS; GROWTH MECHANISMS; HYDRIDE VAPOR PHASE EPITAXY; PROCESS TIME; SILICON (111) SUBSTRATES; STAGE OF GROWTH; X-RAY DIFFRACTION SPECTROSCOPY; XRD;

CATALYSTS; FIELD EMISSION MICROSCOPES; MORPHOLOGY; NANORODS; X RAY DIFFRACTION;

GALLIUM NITRIDE;

EID: 84860430567     PISSN: 15287483     EISSN: 15287505     Source Type: Journal    
DOI: 10.1021/cg201484q     Document Type: Article

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