Synthesis of GaN nanochestnuts by hydride vapour phase epitaxy

Materials Letters

Volumn 64, Issue 10, 2010, Pages 1238-1241

  Shin, M J ^a   Moon, J Y ^a   Kwon, H Y ^a   Choi, Y J ^a   Ahn, H S ^a   Yi, S N ^a   Ha, D H ^b   Huh, Y ^c  

^a Korea Maritime University   (South Korea)

^b Korea Research Institute of Standards and Science   (South Korea)

^c Research Institute of Industrial Science and Technology (RIST)   (South Korea)

Author keywords

Chemical vapour deposition; Crystal structure; Nanomaterials

Indexed keywords

CARRIER GAS FLOW RATES; CHEMICAL VAPOUR DEPOSITION; FIELD EMISSION SCANNING ELECTRON MICROSCOPY; FORMATION PROCESS; HYDRIDE VAPOUR PHASE EPITAXIES; NANO DEVICE; NANO-MATERIALS; STACKING LAYERS;

CHEMICAL VAPOR DEPOSITION; CRYSTAL GROWTH; FIELD EMISSION; FIELD EMISSION MICROSCOPES; GALLIUM ALLOYS; GALLIUM NITRIDE; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; NANONEEDLES; NANORODS; NANOSTRUCTURED MATERIALS; SCANNING ELECTRON MICROSCOPY; SYNTHESIS (CHEMICAL); VAPOR PHASE EPITAXY;

CRYSTAL STRUCTURE;

EID: 77950056554     PISSN: 0167577X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matlet.2010.02.065     Document Type: Article

References (19)

1. Duan X., Huang Y., Agarwal R., and Lieber C.M. Nature 421 (2003) 241-245
2. Polenta L., Rossi M., Cavallini A., Calarco R., Marso M., Meijers R., et al. ACSNANO 2 (2008) 287-292
3. Yi S.N., Na J.H., Lee K.H., Jarjour A.F., Taylor R.A., Park Y.S., et al. Appl Phys Lett 90 (2007) 101901-101903
4. Mahan G.D., Gupta R., Xiong Q., Adu C.K., and Eklund P.C. Phys Rev B 68 (2003) 073402-073404
5. Duan X., and Lieber C.M. J. Am Chem Soc 122 (2000) 18189
6. Nakamura S. Science 281 (1998) 956-961
7. Wang D., Qian F., Yang C., Zhong Z.H., and Lieber C.M. Nano Lett 4 (2004) 871-874
8. Lan Z.H., Liang C.H., Hsu C.W., Wu C.T., Lin H.M., Dhara S., et al. Adv Funct Mater 14 (2004) 233-237
9. Sharma S., and Sunkara M.K. J Am Chem Soc 124 (2002) 12288-12293
10. Jiang C.Y., Sun X.W., Lo G.Q., Kwong D.L., and Wang J.X. Appl Phys Lett 90 (2007) 263501-263503
11. Han W., Redlich P., Ernst F., and Ruhle M. Appl Phys Lett 76 (2000) 652-654
12. Khanderi J., Wohlfart A., Parala H., Devi A., Hambrock J., Birkner A., et al. J Mater Chem 13 (2003) 1438-1446
13. Kim Y.H., Lee J.Y., Lee S.H., Oh J.E., and Lee H.S. Appl Phys A 80 (2005) 1635-1639
14. Liu B.D., Bando Y., Tang C.C., Golberg D., Xie R.G., and Sekiguchi T. Appl Phys Lett 86 (2005) 083107-3
15. Moon J.Y., Kwon H.Y., Choi Y.J., Shin M.J., Yi S.N., Yun Y.J., et al. J Alloys Compd 480 (2009) 853-856
16. Kwon H.Y., Shin M.J., Choi Y.J., Moon J.Y., Ahn H.S., Yi S.N., et al. J Cryst Growth 311 (2009) 4146-4151
17. Turnbull D.A., Li X., Gu S.Q., Reuter E.E., Coleman J.J., and Bishop S.G. J Appl Phys 80 (1996) 4609-4614
18. Nasr F.B., Matoussi A., Salh R., Guermazi S., Fitting H.-J., and Fakhfakh Z. Physica E 41 (2009) 454-459
19. Reshchikov M.A., and Morkoc H.J. Appl Phys 97 (2005) 06130101-06130195