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Journal of Crystal Growth

Volumn 286, Issue 2, 2006, Pages 394-399

Growth mechanisms of GaAs nanowires by gas source molecular beam epitaxy

(2) Plante, M C a LaPierre, R R a

a MCMASTER UNIVERSITY (Canada)

Author keywords

A1. Nanostructures; A3. Molecular beam epitaxy; B1. Nanomaterials; B1. Nanowires; B2. Semiconducting gallium arsenide

Indexed keywords

CATALYSIS; CRYSTAL STRUCTURE; GROWTH KINETICS; MASS TRANSFER; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WIRES;

CATALYTIC AGENTS; MASS TRANSPORT MECHANISMS; NANOMATERIALS; NANOWIRES;

NANOSTRUCTURED MATERIALS;

EID: 29344462416 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2005.10.024 Document Type: Article

Times cited : (113)

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