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Volumn 312, Issue 14, 2010, Pages 2038-2043
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Subtle interplay between polytypism and preferred growth direction alignment in GaN nanorods non-catalytically grown on Si(1 1 1) substrates by using hydride vapor phase epitaxy
a
a,d
a,e
a,d
d
LGSiltron
(South Korea)
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Author keywords
A1. Nucleation; A1. X ray diffraction; A3. Hydride vapor phase epitaxy; B1. Nitrides
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Indexed keywords
A3. HYDRIDE VAPOR PHASE EPITAXY;
B1. NITRIDES;
CRYSTALLOGRAPHIC ANALYSIS;
CRYSTALLOGRAPHIC CHARACTERISTICS;
GAN NANORODS;
GRAZING INCIDENCE;
HYDRIDE VAPOR PHASE EPITAXY;
POLYTYPISM;
PREFERRED GROWTH;
SI (1 1 1);
SYNCHROTRON X RAYS;
WURTZITE PHASE;
WURTZITES;
ZINC BLENDE;
CRYSTAL GROWTH;
GALLIUM NITRIDE;
NANORODS;
NUCLEATION;
SCANNING ELECTRON MICROSCOPY;
SEMICONDUCTING GALLIUM COMPOUNDS;
SINGLE CRYSTALS;
VAPOR PHASE EPITAXY;
VAPORS;
X RAY DIFFRACTION;
X RAYS;
ZINC;
ZINC SULFIDE;
GALLIUM ALLOYS;
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EID: 77955227677
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jcrysgro.2010.03.026 Document Type: Article |
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Times cited : (4)
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References (13)
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