Single crystal growth of one-dimensional GaN nanostructures by halide vapor-phase epitaxy

Journal of Electroceramics

Volumn 17, Issue 2-4, 2006, Pages 903-907

  Byeun, Yun Ki ^a   Han, Kyong Sop ^b   Choi, Sung Churl ^a  

^a Hanyang University   (South Korea)

^b Korea Institute of Science and Technology   (South Korea)

Author keywords

Anisotropic growth; Halide vapor phase epitaxy; One dimensional GaN; Single crystal growth

Indexed keywords

CRYSTAL GROWTH; GALLIUM NITRIDE; OPTICAL PROPERTIES; SINGLE CRYSTALS; TRANSMISSION ELECTRON MICROSCOPY; VAPOR PHASE EPITAXY;

ANISOTROPIC GROWTH; HALIDE VAPOR-PHASE EPITAXY; ONE-DIMENSIONAL GAN; SINGLE CRYSTAL GROWTH;

NANOSTRUCTURED MATERIALS;

EID: 33847240959     PISSN: 13853449     EISSN: 15738663     Source Type: Journal    
DOI: 10.1007/s10832-006-9072-4     Document Type: Conference Paper

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