Gallium nitride nanowires grown by hydride vapor phase epitaxy

Chinese Physics Letters

Volumn 28, Issue 5, 2011, Pages

  Liu, Zhan Hui ^a   Xiu, Xiang Qian ^a   Yan, Huai Yue ^a   Zhang, Rong ^a   Xie, Zi Li ^a   Han, Ping ^a   Shi, Yi ^a   Zheng, You Dou ^a  

^a NANJING UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY DISPERSIVE SPECTROSCOPY; GALLIUM NITRIDE; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; HYDRIDES; III-V SEMICONDUCTORS; NANOWIRES; PHOTOLUMINESCENCE; SINGLE CRYSTALS; VAPOR PHASE EPITAXY; ZINC SULFIDE;

CRYSTAL GROWING; GALLIUM NITRIDE NANOWIRES; GAN NANOWIRES; HYDRIDE VAPOR PHASE EPITAXY; PHONON CONFINEMENT EFFECT; PROPERTY; RED SHIFT; ROOM-TEMPERATURE PHOTOLUMINESCENCE; SCANNING AND TRANSMISSION ELECTRON MICROSCOPY; ]+ CATALYST;

SCANNING ELECTRON MICROSCOPY;

EID: 79955883090     PISSN: 0256307X     EISSN: 17413540     Source Type: Journal    
DOI: 10.1088/0256-307X/28/5/057804     Document Type: Article

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