Selective-area catalyst-free MBE growth of GaN nanowires using a patterned oxide layer

Nanotechnology

Volumn 22, Issue 9, 2011, Pages

  Schumann, T ^a,b   Gotschke, T ^a,b   Limbach, F ^a,b   Stoica, T ^a   Calarco, R ^a,b  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

^b PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BEAM EQUIVALENT PRESSURE; CATALYST-FREE; CRYSTALLOGRAPHIC ORIENTATIONS; E-BEAM LITHOGRAPHY; EXPERIMENTAL DATA; GAN NANOWIRES; GROWTH PARAMETERS; MBE GROWTH; METAL CATALYST; OCCUPATION PROBABILITY; OXIDE LAYER; PARASITIC GROWTH; PATTERNED SILICON; REGULAR ARRAY; RF PLASMA; SI(111) SUBSTRATE; SUBSTRATE TEMPERATURE;

BUFFER LAYERS; CATALYSTS; GALLIUM NITRIDE; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; NANOWIRES; SEMICONDUCTING ALUMINUM COMPOUNDS; SILICON COMPOUNDS; SILICON OXIDES; X RAY DIFFRACTION;

GALLIUM ALLOYS;

GALLIUM; GALLIUM NITRIDE; NANOMATERIAL; OXIDE;

ARTICLE; CATALYSIS; CHEMICAL MODEL; CHEMICAL STRUCTURE; CHEMISTRY; COMPUTER SIMULATION; CRYSTALLIZATION; GAS; HEAT; MATERIALS TESTING; METHODOLOGY; PARTICLE SIZE; SURFACE PROPERTY; ULTRASTRUCTURE;

CATALYSIS; COMPUTER SIMULATION; CRYSTALLIZATION; GALLIUM; GASES; HOT TEMPERATURE; MATERIALS TESTING; MODELS, CHEMICAL; MODELS, MOLECULAR; NANOSTRUCTURES; OXIDES; PARTICLE SIZE; SURFACE PROPERTIES;

EID: 79751522063     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/22/9/095603     Document Type: Article

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