Direct observation of nucleation and early stages of growth of GaN nanowires

Journal of Crystal Growth

Volumn 341, Issue 1, 2012, Pages 1-6

  Diaz, Rosa E ^a,b   Sharma, Renu ^a,c   Jarvis, Karalee ^d   Zhang, Qinglei ^a   Mahajan, Subhash ^a,e  

^a Arizona State University   (United States)

^b BROOKHAVEN NATIONAL LABORATORY   (United States)

^c NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^d The University of Texas at Austin   (United States)

^e University of California Davis   (United States)

Author keywords

A1. In situ TEM; A1. Nucleation; A3. Chemical vapor deposition process; A3. Vaporliquidsolid mechanism; B1. Au catalyst; B1. GaN nanowires

Indexed keywords

A3. CHEMICAL VAPOR DEPOSITION PROCESS; B1. AU CATALYST; B1. GAN NANOWIRES; ENVIRONMENTAL TRANSMISSION ELECTRON MICROSCOPES; FORMATION PROCESS; GROWTH OF GAN; IN-SITU; IN-SITU TEM; INITIAL STAGES; REAL TIME; VLS MECHANISM; WURTZITE STRUCTURE;

CHEMICAL VAPOR DEPOSITION; NANOWIRES; NUCLEATION; TRANSMISSION ELECTRON MICROSCOPY; ZINC SULFIDE;

GALLIUM NITRIDE;

EID: 84862791834     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2011.09.028     Document Type: Article

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