Characterization of amorphous zinc tin oxide semiconductors

Journal of Materials Research

Volumn 27, Issue 17, 2012, Pages 2309-2317

  Rajachidambaram, Jaana S ^a   Sanghavi, Shail ^b   Nachimuthu, Ponnusamy ^b   Shutthanandan, Vaithiyalingam ^b   Varga, Tamas ^b   Flynn, Brendan ^a   Thevuthasan, Suntharampillai ^b   Herman, Gregory S ^a  

^a Oregon State University   (United States)

^b PACIFIC NORTHWEST NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ADSORBED SPECIES; DEVICE PERFORMANCE; ELECTRICAL CHARACTERIZATION; FILM STRUCTURE; HYDROXYL SPECIES; IN-VACUUM; POST ANNEALING; RUTHERFORD BACK-SCATTERING SPECTROMETRY; SUBTHRESHOLD SLOPE; SURFACE CONTAMINATIONS; THIN-FILM TRANSISTOR (TFTS); ZINC TIN OXIDE; ZINC-TIN-OXIDE (ZTO);

PHOTOELECTRONS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; THIN FILM TRANSISTORS; TIN; TIN OXIDES; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY; ZINC;

AMORPHOUS FILMS;

EID: 84865487819     PISSN: 08842914     EISSN: 20445326     Source Type: Journal    
DOI: 10.1557/jmr.2012.170     Document Type: Article

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