Influence of channel stoichiometry on zinc indium oxide thin-film transistor performance

IEEE Transactions on Electron Devices

Volumn 56, Issue 2, 2009, Pages 343-347

  McDowell, Matthew G ^a   Hill, Ian G ^a  

^a DALHOUSIE UNIVERSITY   (Canada)

Author keywords

Amorphous oxide semiconductors; Combinatorial sputtering; RF magnetron sputtering; Thin film transistors

Indexed keywords

CRYSTALS; ELECTRIC CONDUCTIVITY; INDIUM; MAGNETRON SPUTTERING; MAGNETRONS; OXYGEN; SEMICONDUCTING ORGANIC COMPOUNDS; SEMICONDUCTOR MATERIALS; STOICHIOMETRY; THIN FILM DEVICES; THIN FILM TRANSISTORS; THIN FILMS; ZINC; ZINC OXIDE;

AMORPHOUS OXIDE SEMICONDUCTORS; ANNEALING CONDITIONS; COMBINATORIAL SPUTTERING; ON/OFF RATIOS; OXIDE FRACTIONS; PEAK PERFORMANCE; R F SPUTTERING; RF MAGNETRON SPUTTERING; SUB THRESHOLD SLOPES; TURN-ON VOLTAGES; ZINC INDIUM OXIDES; ZNO;

TRANSISTORS;

EID: 59849110632     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2008.2011679     Document Type: Article

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