Electrical and optical properties of Al-doped ZnO-SnO2 thin films deposited by RF magnetron sputtering

Thin Solid Films

Volumn 516, Issue 17, 2008, Pages 5814-5817

  Satoh, Kazuo ^a   Kakehi, Yoshiharu ^a   Okamoto, Akio ^a   Murakami, Shuichi ^a   Moriwaki, Kousuke ^a   Yotsuya, Tsutom ^a  

^a OSAKA MUNICIPAL TECHNICAL RESEARCH INSTITUTE   (Japan)

Author keywords

Aluminum doping; Amorphous; Sputtering; Thin film; Zinc stannate; Zn2SnO4

Indexed keywords

AMORPHOUS FILMS; ELECTRIC CONDUCTIVITY; MAGNETRON SPUTTERING; REFRACTIVE INDEX; SEMICONDUCTOR DOPING; WAVELENGTH;

ALUMINUM DOPING; FREE CARRIER DENSITY; GAS PRESSURE; ZINC STANNATE;

THIN FILMS;

EID: 44249102778     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2007.10.055     Document Type: Article

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