Combinatorial study of zinc tin oxide thin-film transistors

Applied Physics Letters

Volumn 92, Issue 1, 2008, Pages

  McDowell, M G ^a   Sanderson, R J ^a   Hill, I G ^a  

^a DALHOUSIE UNIVERSITY   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; CHANNEL STATE INFORMATION; COMBINATORIAL CIRCUITS; OXIDE FILMS; SEMICONDUCTOR MATERIALS; SPUTTERING; STOICHIOMETRY; THRESHOLD VOLTAGE; TRANSITION METAL COMPOUNDS; ZINC OXIDE;

CHANNEL STOICHIOMETRY; COMBINATORIAL SPUTTERING TECHNIQUES; ZINC TIN OXIDES;

THIN FILM TRANSISTORS;

EID: 38049042732     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2828862     Document Type: Article

References (13)

1. P. F. Carcia, R. S. McLean, M. H. Reilly, and G. Nunes, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1553997 82, 1117 (2003).
2. R. L. Hoffman, B. J. Norris, and J. F. Wager, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1542677 82, 733 (2003).
3. D. J. Gundlach, T. N. Jackson, Y. Y. Lin, and D. G. Schlom, IEEE Electron Device Lett. EDLEDZ 0741-3106 10.1109/55.556089 18, 87 (1997).
4. N. L. Dehuff, E. S. Kettenring, D. Hong, H. Q. Chiang, J. F. Wager, R. L. Hoffman, C.-H. Park, and D. A. Keszler, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1862767 97, 064505 (2005).
5. H. Q. Chiang, D. Hong, C. M. Hung, R. E. Presley, J. F. Wager, C.-H. Park, G. S. Herman, and D. A. Keszler, J. Vac. Sci. Technol. B JVTBD9 1071-1023 10.1116/1.2366569 24, 2702 (2006).
6. H. Q. Chiang, J. F. Wager, R. L. Hoffman, J. Jeong, and D. A. Keszler, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1843286 86, 013503 (2005).
7. W. B. Jackson, R. L. Hoffman, and G. S. Herman, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2120895 87, 193503 (2005).
8. T. Minami, S. Takata, H. Sato, and H. J. Sonohara, J. Vac. Sci. Technol. A JVTAD6 0734-2101 10.1116/1.579592 13, 1095 (1995).
9. W. B. Jackson, G. S. Herman, R. L. Hoffman, C. Taussig, S. Braymen, F. Jeffrey, and J. Hauschildt, J. Non-Cryst. Solids JNCSBJ 0022-3093 352, 1753 (2006).
10. D. Kovachera and K. Petrov, Solid State Ionics SSIOD3 0167-2738 10.1016/S0167-2738(97)00507-9 109, 327 (1998).
11. D. L. Young, H. Moutinho, A. T. Yan, and T. J. Coutts, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1483104 92, 310 (2002).
12. R. L. Hoffman, Solid-State Electron. SSELA5 0038-1101 10.1016/j.sse.2006.03.004 50, 784 (2006).
13. J. R. Dahn, S. Trussler, T. D. Hatchard, A. Bonakdarpour, J. N. Meuller-Neuhaus, K. C. Hewitt, and M. Fleischauer, Chem. Mater. CMATEX 0897-4756 10.1021/cm020236x 14, 3519 (2002).