Influence of oxygen flow ratio on properties of Zn2SnO 4 thin films deposited by RF magnetron sputtering

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 44, Issue 1-7, 2005, Pages

  Satoh, Kazuo ^a   Kakehi, Yoshiharu ^a   Okamoto, Akio ^a   Murakami, Shuichi ^a   Uratani, Fumihiro ^a   Yotsuya, Tsutom ^a  

^a OSAKA MUNICIPAL TECHNICAL RESEARCH INSTITUTE   (Japan)

Author keywords

Sputtering; Stoichiometry; Thin film; Zinc stannate; Zn2SnO4

Indexed keywords

DEPOSITION; EMISSION SPECTROSCOPY; ENERGY GAP; INDUCTIVELY COUPLED PLASMA; MAGNETRON SPUTTERING; MIXTURES; OXYGEN; STOICHIOMETRY; X RAY DIFFRACTION; ZINC COMPOUNDS;

FLOW RATIO; POSTDEPOSITION ANNEALING; ZINC STANNATE; ZN2SNO4;

THIN FILMS;

EID: 17444371309     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.44.L34     Document Type: Article

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