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Journal of Alloys and Compounds

Volumn 509, Issue 8, 2011, Pages 3541-3546

Study of post annealing influence on structural, chemical and electrical properties of ZTO thin films

(6) Jain, Vipin Kumar a Kumar, Praveen b Kumar, Mahesh b Jain, Praveen c Bhandari, Deepika d Vijay, Y K a

a UNIVERSITY OF RAJASTHAN (India)

b NATIONAL PHYSICAL LABORATORY (India)

c INDIAN INSTITUTE OF TECHNOLOGY ROORKEE (India)

d S S Jain Subodh P G College (India)

Author keywords

AFM; Electrical resistivity; Flash evaporation; XPS; XRD; ZTO thin film

Indexed keywords

AFM; ELECTRICAL RESISTIVITY; FLASH EVAPORATION; XPS; XRD; ZTO THIN FILM;

ANNEALING; ATOMIC FORCE MICROSCOPY; BINDING ENERGY; CARRIER CONCENTRATION; CONCENTRATION (PROCESS); ELECTRIC CONDUCTIVITY; ELECTRONIC STRUCTURE; EVAPORATION; GALVANOMAGNETIC EFFECTS; HALL MOBILITY; NUCLEAR ENERGY; POTENTIAL ENERGY; SUBSTRATES; THIN FILMS; TIN; X RAY PHOTOELECTRON SPECTROSCOPY; ZINC; ZINC OXIDE;

OXIDE FILMS;

EID: 79551493477 PISSN: 09258388 EISSN: None Source Type: Journal
DOI: 10.1016/j.jallcom.2010.10.212 Document Type: Article

Times cited : (50)

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