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Electrochemical and Solid-State Letters

Volumn 13, Issue 10, 2010, Pages

Postannealing process for low temperature processed sol-gel zinc tin oxide thin film transistors

(3) Seo, Seok Jun a Hwang, Young Hwan a Bae, Byeong Soo a

a Korea Advanced Institute of Science and Technology (KAIST) (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TEMPERATURES; BEFORE AND AFTER; ENHANCED PERFORMANCE; LOW TEMPERATURES; OFF CURRENT; POST ANNEALING; POSTANNEALING PROCESS; SATURATION MOBILITY; SOL GEL SOLUTIONS; SUBTHRESHOLD SWING; TRANSISTOR PERFORMANCE; WET AIR; ZINC TIN OXIDE;

GELS; SOL-GEL PROCESS; SOL-GELS; SOLS; THIN FILMS; TIN; TIN OXIDES; TITANIUM COMPOUNDS; VACUUM; X RAY PHOTOELECTRON SPECTROSCOPY; ZINC;

THIN FILM TRANSISTORS;

EID: 77955734598 PISSN: 10990062 EISSN: None Source Type: Journal
DOI: 10.1149/1.3474606 Document Type: Article

Times cited : (64)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.