Optical properties of individual GaN nanorods for light emitting diodes: Influence of geometry, materials, and facets

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7933, Issue , 2011, Pages

  Kolper C ^a,b   Sabathil, M ^a   Witzigmann, B ^b   Romer F ^b   Bergbauer, W ^a   Strassburg, M ^a  

^a OSRAM OPTO SEMICONDUCTORS GMBH   (Germany)

^b UNIVERSITY OF KASSEL   (Germany)

Author keywords

Beam shaping; Extraction efficiency; GaN; LED; Nanorods; Nitrides; Optical waveguide; Purcell effect

Indexed keywords

BEAM-SHAPING; EXTRACTION EFFICIENCY; GAN; LED; PURCELL EFFECT;

ELECTROOPTICAL DEVICES; EXTRACTION; GALLIUM NITRIDE; GEOMETRY; INTERFACES (MATERIALS); LIGHT EMISSION; LIGHT EMITTING DIODES; NANORODS; OPTOELECTRONIC DEVICES;

OPTICAL PROPERTIES;

EID: 79955749004     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.874984     Document Type: Conference Paper

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