High power LEDs for solid state lighting

2010 Proceedings of the European Solid State Device Research Conference, ESSDERC 2010

Volumn , Issue , 2010, Pages 57-63

  Hahn, Berthold ^a  

^a OSRAM OPTO SEMICONDUCTORS GMBH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AUGER EFFECTS; CARRIER DENSITY; CARRIER LOSS; CHIP DESIGN; EFFICIENCY IMPROVEMENT; EXTRACTION EFFICIENCIES; HIGH CURRENTS; HIGH EFFICIENCY; HIGH FLUX; HIGH POWER LED; INGAN LED; LIGHT OUTPUT; LOSS MECHANISMS; LOW CURRENT DENSITY; PACKAGE DESIGNS; SOLID STATE LIGHTING; THINGAN;

DESIGN; EPITAXIAL GROWTH; EXTRACTION; LIGHTING; SOLID STATE DEVICES;

LIGHT EMITTING DIODES;

EID: 78649938477     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.2010.5617734     Document Type: Conference Paper

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