Simulation and design of core-shell GaN nanowire LEDs

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7597, Issue , 2010, Pages

  Connors, B ^a   Povolotskyi, M ^b   Hicks, R ^a   Klein, B ^a  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^b PURDUE UNIVERSITY   (United States)

Author keywords

Core shell; Current crowding; GaN; LED; Nanowire

Indexed keywords

CORE-SHELL; CORE-SHELL NANOWIRES; CURRENT CROWDING; DOPING PROFILES; DRIFT-DIFFUSION MODEL; ELECTRON BLOCKING LAYER; EMISSION EFFICIENCIES; EXTERNAL EFFICIENCY; FINITE-ELEMENT; GAN NANOWIRES; HIGH-CRYSTALLINE QUALITY; NUMERICAL SIMULATION; OPTICAL RECOMBINATION; P-CONTACTS; P-N JUNCTION; POLARIZATION FIELD; QUANTUM WELL; SIMULATION PACKAGES; SPATIAL DISTRIBUTION; SURFACE AREA;

COMPUTER SIMULATION; DOPING (ADDITIVES); ELECTRON MOBILITY; ELECTROOPTICAL DEVICES; FINITE ELEMENT METHOD; GALLIUM ALLOYS; GALLIUM NITRIDE; HETEROJUNCTIONS; OPTOELECTRONIC DEVICES; SHELLS (STRUCTURES); SIZE DISTRIBUTION;

NANOWIRES;

EID: 77953319238     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.842621     Document Type: Conference Paper

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