Characterization of blue-green m -plane InGaN light emitting diodes

Applied Physics Letters

Volumn 94, Issue 26, 2009, Pages

  Lin, You Da ^a   Chakraborty, Arpan ^a   Brinkley, Stuart ^a   Kuo, Hsun Chih ^a   Melo, Thiago ^a   Fujito, Kenji ^b   Speck, James S ^a   Denbaars, Steven P ^a   Nakamura, Shuji ^a  

^a University of California   (United States)

^b MITSUBISHI CHEMICAL CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER THICKNESS; BLUE SHIFT; BLUE-GREEN LED; ELECTROLUMINANCE; GAN SUBSTRATE; INDIUM CONTENT; M-PLANE; OUTPUT POWER; PEAK WAVELENGTH; PULSED OPERATION; SYSTEMATIC STUDY; WELL WIDTH;

DEFECT DENSITY; GALLIUM ALLOYS; GALLIUM NITRIDE; LIGHT EMISSION; LIGHTING; SEMICONDUCTING GALLIUM;

LIGHT EMITTING DIODES;

EID: 67649921102     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3167824     Document Type: Article

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