Determination of internal parameters for AlGaN-cladding-free m-plane InGaN/GaN laser diodes

Applied Physics Letters

Volumn 99, Issue 17, 2011, Pages

  Farrell, R M ^a   Haeger, D A ^a   Hsu, P S ^a   Fujito, K ^b   Feezell, D F ^a   Denbaars, S P ^a   Speck, J S ^a   Nakamura, S ^a  

^a University of California   (United States)

^b MITSUBISHI CHEMICAL CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CAVITY LENGTH; DEVICE CHARACTERISTICS; ELECTRICALLY INJECTED; INGAN/GAN; INJECTION EFFICIENCY; INTERNAL LOSS; INTERNAL PARAMETERS; LIGHT EMITTING DEVICES; M-PLANE; MATERIAL GAIN; RECOMBINATION COEFFICIENT;

EID: 80555154328     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3657149     Document Type: Article

References (27)

1. S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, and Y. Sugimoto, Jpn. J. Appl. Phys., Part 2 35, L74 (1996). 10.1143/JJAP.35.L74
2. L. A. Coldren and S. W. Corzine, Diode Lasers and Photonic Integrated Circuits, 1st ed. (Wiley, New York, 1995).
3. M. Suzuki and T. Uenoyama, Jpn. J. Appl. Phys., Part 1 35, 1420 (1996). 10.1143/JJAP.35.1420
4. A. E. Romanov, T. J. Baker, S. Nakamura, and J. S. Speck, J. Appl. Phys. 100, 023522 (2006). 10.1063/1.2218385 (Pubitemid 44179534)
5. M. Suzuki and T. Uenoyama, Jpn. J. Appl. Phys., Part 2 35, L953 (1996). 10.1143/JJAP.35.L953
6. K. Domen, K. Horino, A. Kuramata, and T. Tanahashi, Appl. Phys. Lett. 70, 987 (1997). 10.1063/1.118457
7. S. H. Park, Jpn. J. Appl. Phys., Part 2 42, L170 (2003). 10.1143/JJAP.42.L170
8. W. G. Scheibenzuber, U. T. Schwarz, R. G. Veprek, B. Witzigmann, and A. Hangleiter, Phys. Rev. B 80, 115320 (2009). 10.1103/PhysRevB.80.115320
9. S. Kamiyama, K. Ohnaka, M. Suzuki, and T. Uenoyama, Jpn. J. Appl. Phys., Part 2 34, L821 (1995). 10.1143/JJAP.34.L821
10. W. W. Chow, A. Knorr, and S. W. Koch, Appl. Phys. Lett. 67, 754 (1995). 10.1063/1.115215
11. W. Fang and S. L. Chuang, Appl. Phys. Lett. 67, 751 (1995). 10.1063/1.115214
12. A. T. Meney and E. P. Oreilly, Appl. Phys. Lett. 67, 3013 (1995). 10.1063/1.114936
13. S. Uchida, M. Takeya, S. Ikeda, T. Mizuno, T. Fujimoto, O. Matsumoto, S. Goto, T. Tojyo, and M. Ikeda, IEEE J. Sel. Top. Quantum Electron. 9, 1252 (2003). 10.1109/JSTQE.2003.820910
14. U. T. Schwarz, E. Sturm, W. Wegscheider, V. Kummler, A. Lell, and V. Harle, Appl. Phys. Lett. 83, 4095 (2003). 10.1063/1.1628825
15. K. Kojima, U. T. Schwarz, M. Funato, Y. Kawakami, S. Nagahama, and T. Mukai, Opt. Express 15, 7730 (2007). 10.1364/OE.15.007730 (Pubitemid 46906988)
16. H. Y. Ryu, K. H. Ha, J. K. Son, S. N. Lee, H. S. Paek, T. Jang, Y. J. Sung, K. S. Kim, H. K. Kim, Y. Park, and O. H. Nam, Appl. Phys. Lett. 93, 011105 (2008). 10.1063/1.2956413
17. R. M. Farrell, P. S. Hsu, D. A. Haeger, K. Fujito, S. P. DenBaars, J. S. Speck, and S. Nakamura, Appl. Phys. Lett. 96, 231113 (2010). 10.1063/1.3443719
18. R. M. Farrell, Ph.D. thesis, University of California, Santa Barbara, 2010.
19. E. Kioupakis, P. Rinke, and C. G. Van de Walle, Appl. Phys. Express 3, 082101 (2010). 10.1143/APEX.3.082101
20. J. P. Wittke, RCA Rev. 36, 655 (1975).
21. A. David and M. J. Grundmann, Appl. Phys. Lett. 96, 103504 (2010). 10.1063/1.3330870
22. Y. C. Shen, G. O. Mueller, S. Watanabe, N. F. Gardner, A. Munkholm, and M. R. Krames, Appl. Phys. Lett. 91, 141101 (2007). 10.1063/1.2785135 (Pubitemid 47534188)
23. M. Zhang, P. Bhattacharya, J. Singh, and J. Hinckley, Appl. Phys. Lett. 95, 201108 (2009). 10.1063/1.3266520
24. M. Meneghini, N. Trivellin, G. Meneghesso, E. Zanoni, U. Zehnder, and B. Hahn, J. Appl. Phys. 106, 114508 (2009). 10.1063/1.3266014
25. W. G. Scheibenzuber, U. T. Schwarz, L. Sulmoni, J. Dorsaz, J. F. Carlin, and N. Grandjean, J. Appl. Phys. 109, 093106 (2011). 10.1063/1.3585872
26. E. Kioupakis, P. Rinke, K. T. Delaney, and C. G. Van de Walle, Appl. Phys. Lett. 98, 161107 (2011). 10.1063/1.3570656
27. A. David and M. J. Grundmann, Appl. Phys. Lett. 97, 033501 (2010). 10.1063/1.3462916