Computational study of carrier injection in III-nitride core-shell nanowire-LEDs

IEEE - 2011 Semiconductor Conference Dresden: Technology, Design, Packaging, Simulation and Test, SCD 2011 - International Conference, Workshop and Table-Top Exhibition

Volumn , Issue , 2011, Pages

  Deppner, Marcus ^a   Römer, Friedhard ^a   Witzigmann, Bernd ^a   Ledig, Johannes ^b   Neumann, Richard ^b   Waag, Andreas ^b   Bergbauer, Werner ^b,c   Strassburg, Martin ^c  

^a UNIVERSITY OF KASSEL   (Germany)

^b TECHNICAL UNIVERSITY OF BRAUNSCHWEIG   (Germany)

^c OSRAM OPTO SEMICONDUCTORS GMBH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE REGIONS; BAND EDGE; CARRIER INJECTION; COMPUTATIONAL ANALYSIS; COMPUTATIONAL STUDIES; CORE-SHELL; GAN/INGAN; III-NITRIDE; MULTIQUANTUM WELLS; NON-POLAR; POLARIZATION EFFECT;

CHIP SCALE PACKAGES; CRYSTAL ORIENTATION; NANOWIRES; NITRIDES;

SEMICONDUCTOR QUANTUM WELLS;

EID: 82155163905     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SCD.2011.6068745     Document Type: Conference Paper

References (10)

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