Effect of the initial structure on the electrical property of crystalline silicon films deposited on glass by hot-wire chemical vapor deposition

Journal of Nanoscience and Nanotechnology

Volumn 12, Issue 7, 2012, Pages 5947-5951

  Chung, Yung Bin ^a   Lee, Sang Hoon ^a   Bae, Sung Hwan ^a   Park, Hyung Ki ^a   Jung, Jae Soo ^a   Hwang, Nong Moon ^a  

^a Seoul National University   (South Korea)

Author keywords

Crystalline Silicon Thin Film; Low Temperature Deposition; Seed Particle; Solar Cells

Indexed keywords

ADDITIONAL ANNEALING; CRYSTALLINE SILICON FILMS; CRYSTALLINE SILICON THIN FILMS; CRYSTALLINE SILICONS; DELAY TIME; EXCIMER LASER ANNEALING; GLASS SUBSTRATES; HCL GAS; HOT WIRE CHEMICAL VAPOR DEPOSITION; INITIAL STRUCTURES; LOW TEMPERATURES; LOW-TEMPERATURE DEPOSITION; METAL-INDUCED CRYSTALLIZATION; RELATIVE DENSITY; SEED PARTICLE; SILICON PARTICLES;

CHEMICAL VAPOR DEPOSITION; CRYSTALLINE MATERIALS; EXCIMER LASERS; GLASS; RAPID THERMAL ANNEALING; SOLAR CELLS; SUBSTRATES; TEMPERATURE; VAPORS; WIRE;

ELECTRIC PROPERTIES;

EID: 84865143567     PISSN: 15334880     EISSN: 15334899     Source Type: Journal    
DOI: 10.1166/jnn.2012.6415     Document Type: Article

References (27)

1. T. Sameshima, S. Usui, and M. Sekiya, IEEE Electr. Device L 7, 276 (1986).
2. A. Shah, J. Meier, E. Vallat-Sauvain, N. Wyrsch, U. Kroll, C. Droz, and U. Graf, Sol. Energ. Mat. Sol. C 78, 469 (2003).
3. Q. J. Cheng, S. Y. Xu, S. Y. Huang, and K. Ostrikov, Cryst. Growth Des. 9, 2863 (2009).
4. J. Rath, B. Stannowski, P. van Veenendaal, M. van Veen, and R. E. I. Schropp, Thin Solid Films 395, 320 (2001).
5. Z. Li, W. Li, H. Cai, Y. Gong, and Y. Jiang, J. Nanosci. Nanotechnol. 10, 7667 (2010).
6. J. Rath, Sol. Energ. Mat. Sol. C 76, 431 (2003).
7. P. Luo, Z. Zhou, Y. Li, S. Lin, X. Dou, and R. Cui, Microelectr. J. 39, 12 (2008).
8. R. Collins and A. Ferlauto, Curr. Opin. Solid St. M. 6, 425 (2002).
9. T. Shimoda, Y. Matsuki, M. Furusawa, T. Aoki, I. Yudasaka, H. Tanaka, H. Iwasawa, D. Wang, M. Miyasaka, and Y. Takeuchi, Nature 440, 783 (2006).
10. R. Morimoto, A. Izumi, A. Masuda, and H. Matsumura, Jpn. J. Appl. Phys. 41, 501 (2002).
11. N. Yamauchi and R. Reif, J. Appl. Phys. 75, 3235 (1994).
12. C. Jeong, H. S. Na, and S. H. Lee, J. Nanosci. Nanotechnol. 11, 1350 (2011).
13. J. Jang, J. Y. Oh, S. K. Kim, Y. J. Choi, S. Y. Yoon, and C. O. Kim, Nature 395, 481 (1998).
14. Y. B. Chung, D. K. Lee, C. S. Kim, and N. M. Hwang, Vacuum 83, 1431 (2009).
15. Y. B. Chung, D. K. Lee, J. S. Lim, and N. M. Hwang, Sol. Energ. Mat. Sol. C 95, 211 (2011).
16. Y. B. Chung, H. K. Park, D. K. Lee, W. Jo, J. H. Song, S. H. Lee, and N. M. Hwang, J. Cryst. Growth 327, 57 (2011).
17. W. Wallace and W. Wu, Appl. Phys. Lett. 67, 1203 (1995).
18. M. F. Toney and S. Brennan, J. Appl. Phys. 66, 1861 (1989).
19. P. Bergese, E. Bontempi, and L. E. Depero, Appl. Surf. Sci. 253, 28 (2006).
20. M. Groner, F. Fabreguette, J. Elam, and S. George, Chem. Mater. 16, 639 (2004).
21. C. W. Teplin, C. S. Jiang, P. Stradins, and H. M. Branz, Appl. Phys. Lett. 92, 093114 (2008).
22. T. Mates, P. C. P. Bronsveld, A. Fejfar, B. Rezek, J. Kocka, J. Rath, and R. Schropp, J. Non-Cryst. Solids 352, 1011 (2006).
23. A. Fejfar and T. Mates, J. Non-Cryst. Solids 338, 303 (2004).
24. A. T. Krishnan, S. Bae, and S. J. Fonash, Solid State Electron 44, 1163 (2000).
25. N. M. Hwang and D. K. Lee, J. Phys. D Appl. Phys. 43, 483001 (2010).
26. N. M. Hwang and D. Y. Kim, Int. Mater. Rev. 49, 171 (2004).
27. S. S. Lee, M. S. Ko, C. S. Kim, and N. M. Hwang, J. Cryst. Growth 310, 3659 (2008).